|
Manufacturer |
Infineon Technologies |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
30V |
|
Current - Continuous Drain (Id) @ 25°C |
5.3A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Vgs(th) (Max) @ Id |
2.3V @ 25µA |
|
Gate Charge (Qg) (Max) @ Vgs |
2.6nC @ 4.5V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
382pF @ 15V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
1.3W (Ta) |
|
Rds On (Max) @ Id, Vgs |
27 mOhm @ 5.2A, 10V |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |